| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-563 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN2901FE to RN2906FE APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Toshiba
8 Pages / 0.52 MByte
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Us6 Pln (Lf) Tran 200mW /250m
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Trans 2npn Prebias 0.1W(1/10W) Es6
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