| TYPE | DESCRIPTION |
|---|
| Case/Package | FSM |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 20 V |
| Continuous Collector Current | 50mA |
Features •Transistor Silicon PNP Epitaxial Type (PCT Process) •Bias Resistor built-in Transistor •Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. •Complementary to RN1101FS~RN1106FS Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Toshiba
8 Pages / 0.18 MByte
Toshiba
8 Pages / 0.18 MByte
Toshiba
Trans Digital BJT PNP 50V 100mA 3Pin SOT-416
Toshiba
TRANS PREBIAS PNP 0.05W(1/20W) CST3
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