| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-323 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 200 MHz |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1301to1306 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Toshiba
7 Pages / 0.25 MByte
Toshiba
7 Pages / 0.44 MByte
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