| TYPE | DESCRIPTION |
|---|
| Case/Package | ES-6 |
| Polarity | NPN+PNP |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Features • TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
Toshiba
6 Pages / 0.26 MByte
Toshiba
6 Pages / 0.27 MByte
Toshiba
6 Pages / 0.3 MByte
Toshiba
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Toshiba
Toshiba Transistor Silicon Npn/pnp Epitaxial Type Pct Process Transistor With Built-in Bias Resistor
Toshiba
Trans Npn/Pnp Prebias 0.1W(1/10W) Es6
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
