TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOT-563 |
Breakdown Voltage (Collector to Emitter) | 50 V |
hFE Min | 80 @10mA, 5V |
Input Power (Max) | 100 mW |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Toshiba
6 Pages / 0.27 MByte
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Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
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Toshiba Transistor Silicon Npn/pnp Epitaxial Type Pct Process Transistor With Built-in Bias Resistor
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Trans Npn/Pnp Prebias 0.1W(1/10W) Es6
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