| TYPE | DESCRIPTION |
|---|
| Case/Package | ES-6 |
| Polarity | NPN+PNP |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Features • TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
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6 Pages / 0.25 MByte
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4 Pages / 0.08 MByte
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Transistor Silicon NPN-PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
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Trans Npn/Pnp Prebias 0.1W(1/10W) Es6
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Trans Digital BJT NPN/PNP 50V 100mA 6Pin US T/R
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TRANS NPN/PNP PREBIAS 0.2W US6
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