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RQ3E120BNTB
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RQ3E120BNTB Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:MOSFETs
Case Package:HSMT-8
Description:ROHM RQ3E120BNTB MOSFET Transistor, N Channel, 12A, 30V, 0.0066Ω, 10V, 2.5V
Documentation:RQ3E120BNTB Datasheet (14 Pages)
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RQ3E120BNTB Datasheet PDF (14 Pages)
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RQ3E120BNTB Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageHSMT-8
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.0066 Ω
PolarityN-Channel
Power Dissipation2 W
Threshold Voltage2.5 V
Drain to Source Voltage (Vds)30 V
Rise Time30 ns
Input Capacitance (Ciss)1500pF @15V(Vds)
Fall Time12 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2W (Ta)
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RQ3E120BNTB Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature150℃ (TJ)
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RQ3E120BNTB Documents

RQ3E120BNTB Datasheet
ROHM Semiconductor
14 Pages / 2.33 MByte
RQ3E120BNTB Other Datasheet PDF
ROHM Semiconductor
12 Pages / 2.44 MByte

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ROHM RQ3E120BNTB MOSFET Transistor, N Channel, 12A, 30V, 0.0066Ω, 10V, 2.5V
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