RSJ650N10TL Datasheet PDF - ROHM Semiconductor

Manufacturer:	ROHM Semiconductor
Category:	MOSFETs
Case Package:	TO-263-3
Description:	LPTS N-CH 100V 65A
Documentation:	RSJ650N10TL Datasheet (8 Pages)Package Outline Dimension on1 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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RSJ650N10TL Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	9.1 mΩ
Polarity	N-Channel
Power Dissipation	100 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	65A
Rise Time	170 ns
Input Capacitance (Ciss)	10780pF @25V(Vds)
Input Power (Max)	100 W
Fall Time	480 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	100W (Tc)