| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | N |
| Drain to Source Voltage (Vds) | 45 V |
| Continuous Drain Current (Ids) | 2A |
| TYPE | DESCRIPTION |
|---|
| Minimum Packing Quantity | 3000 |
2.5V Drive Nch MOS FET
●Features
●1) Low On- resistance.
●2) Space saving small surface mount package (TSMT3).
●3) Low voltage drive (2. 5V dr ive) .
●Applications
●Switching
●Struct ure
●Silicon N-channel MOSFET
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