| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-323-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.028 Ω |
| Polarity | P-Channel |
| Power Dissipation | 800 mW |
| Drain to Source Voltage (Vds) | 12 V |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 1860pF @6V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 120 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2 mm |
| Size-Width | 1.7 mm |
| Size-Height | 0.77 mm |
| Operating Temperature | 150℃ (TJ) |
The RZF030P01TL is a P-channel silicon MOSFET offers -12V drain source voltage and ±3A continuous drain current. It is suitable for use in switching applications.
● Low ON-resistance
● High power package
● 1.5V Low drive voltage
ROHM Semiconductor
2 Pages / 0.22 MByte
ROHM Semiconductor
14 Pages / 1.17 MByte
ROHM Semiconductor
TUMT3/SOT-323T P -12V -3A 0.072Ω
ROHM Semiconductor
ROHM RZF030P01TL MOSFET Transistor, P Channel, -3A, -12V, 0.028Ω, -4.5V, -300mV
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