TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Forward Voltage | 1.6V @15A |
Power Dissipation | 360 W |
Reverse recovery time | 0 ns |
Forward Current | 30 A |
Max Forward Surge Current (Ifsm) | 480 A |
Maximum Forward Voltage (Max) | 1.9 V |
Forward Current (Max) | 30 A |
Operating Temperature (Max) | 175 ℃ |
Junction Temperature | 175℃ (Max) |
Junction Temperature (Max) | 175 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Length | 15.9 mm |
Size-Width | 5.03 mm |
Size-Height | 20.95 mm |
Operating Temperature | -55℃ ~ 175℃ |
The SCS230KE2C is a silicon carbide epitaxial planer SiC Schottky Barrier Diode features high speed switching and shorter recovery time. It can also be used in AC Servo, stepper motor control and solar power inverters.
● Reduced temperature dependence
● Reduced switching loss
● 175°C Junction temperature
ROHM Semiconductor
2 Pages / 0.1 MByte
ROHM Semiconductor
7 Pages / 0.67 MByte
ROHM Semiconductor
41 Pages / 0.88 MByte
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2 Pages / 0.06 MByte
ROHM Semiconductor
9 Pages / 3.18 MByte
ROHM Semiconductor
Silicon Carbide Schottky Diode, Barrier, 1200V Series, Dual Common Cathode, 1.2kV, 30A, 51NC
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