| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.052 Ω |
| Power Dissipation | 318 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 1200 V |
| Input Capacitance (Ciss) | 1900pF @400V(Vds) |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 318000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
●Key Features
● Very tight variation of on-resistance vs. temperature
● Very high operating junction temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
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