| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | HiP-247 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 100A |
| Input Capacitance (Ciss) | 3315pF @520V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 420000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The main features of this product include remarkably low on-resistance per unit area and very good switching performance. The variation of both RDS(on) and switching losses are almost independent from junction temperature.
●Key Features
● Designed for automotive applications
● Tight variation of on-resistance vs. temperature
● Very fast and robust intrinsic body diode
● Very high operating temperature capability (TJ = 200 °C)
● Low capacitance
ST Microelectronics
24 Pages / 1.51 MByte
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