| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | HiP-247 |
| Power Dissipation | 318000 mW |
| Input Capacitance (Ciss) | 1900pF @400V(Vds) |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 318000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 200℃ |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
●Key Features
● Very tight variation of on-resistance vs. temperature
● Very high operating junction temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
ST Microelectronics
24 Pages / 1.51 MByte
ST Microelectronics
15 Pages / 2.34 MByte
ST Microelectronics
17 Pages / 0.54 MByte
ST Microelectronics
Trans MOSFET N-CH SiC 1.2kV 65A 3Pin HIP-247 Tube
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