| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 18.0 V |
| Current Rating | 20.0 A |
| Case/Package | M-111 |
| Power Dissipation | 270 W |
| Breakdown Voltage (Collector to Emitter) | 18 V |
| Gain | 6 dB |
| hFE Min | 10 @5A, 5V |
| hFE Max | 10 @5A, 5V |
| Input Power (Max) | 270 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 270000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tray |
| Size-Length | 24.89 mm |
| Size-Width | 21.97 mm |
| Size-Height | 7.11 mm |
| Operating Temperature | 200℃ (TJ) |
RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS
●DESCRIPTION
●The SD1477 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF
●FM communications. This device utilizes diffused emitter resistors to withstand extremely high
●VSWR under rated operating conditions, and is in ternally input matched to optimize power gain and efficiency over the 136 - 175 MHz band.
●FEATURES SUMMARY
●■ 175 MHz
●■ 12.5 VOLTS
●■ COMMON EMITTER
●■ POUT= 100 W MIN. WITH 6.0 dB GAIN
ST Microelectronics
9 Pages / 0.24 MByte
ST Microelectronics
9 Pages / 0.24 MByte
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