| TYPE | DESCRIPTION |
|---|
| Frequency | 860 MHz |
| Number of Pins | 5 Pin |
| Current Rating | 14 A |
| Case/Package | M-264 |
| Power Dissipation | 217000 mW |
| Output Power | 100 W |
| Gain | 16 dB |
| Test Current | 400 mA |
| Input Capacitance (Ciss) | 82pF @28V(Vds) |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 217000 mW |
| Voltage Rating | 72 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tray |
| Size-Height | 5.08 mm |
Easily amplify or switch electronic signals and electrical power in a circuit with this semiconductor-based SD56120C RF amplifier from STMicroelectronics. Its maximum power dissipation is 217000 mW. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 860 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C.
ST Microelectronics
15 Pages / 0.21 MByte
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