| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | T-1 |
| Output Current | ≤24.0 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 935 nm |
| Viewing Angle | 20° |
| Peak Wavelength | 935 nm |
| Polarity | NPN |
| Power Dissipation | 70 mW |
| Power Consumption | 70 mW |
| Rise Time | 15000 ns |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Input Power (Max) | 70 mW |
| Fall Time | 15 µs |
| Fall Time (Max) | 15000 ns |
| Fall Time (Max) | 15000 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 70 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 3.94 mm |
| Size-Width | 3.94 mm |
| Size-Height | 6.35 mm |
| Size-Diameter | 3.17 mm |
| Lead Length | 0.5 in |
| Operating Temperature | -40℃ ~ 85℃ |
The SDP8405-003 is an infrared NPN Silicon Phototransistor with 20° (nominal) acceptance angle. Transfer moulding of this device assures superior optical centreline performance compared to other moulding processes. Lead lengths are staggered to provide a simple method of polarity identification.
● Consistent optical properties
● Through-hole mounting configuration
● Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes
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