TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Case/Package | T-1 |
Number of Channels | 1 Channel |
Number of Positions | 2 Position |
Wavelength | 880 nm |
Viewing Angle | 50° |
Peak Wavelength | 880 nm |
Power Dissipation | 0.2 W |
Power Consumption | 200 mW |
Rise Time | 10 µs |
Breakdown Voltage (Collector to Emitter) | 35 V |
Input Power (Max) | 200 mW |
Fall Time | 10 µs |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 200 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 5.9 mm |
Size-Width | 5.9 mm |
Size-Height | 9 mm |
Operating Temperature | -40℃ ~ 100℃ (TA) |
●Phototransistor T-1 3/4 (5mm) Package
●This family of NPN silicon phototransistors, from OSRAM Opto Semiconductors, are a range of 5mm (T-1 3/4) through-hole devices. They have both clear or black plastic lenses, the diffused lenses being used for daylight filters. Suitable applications include; computer-controlled flashes, photointerrupters, industrial electronics and for control/drive circuits.
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