| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 30 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
Infineon
11 Pages / 0.79 MByte
Infineon
11 Pages / 0.77 MByte
Infineon
Trans IGBT Chip N-CH 1.2kV 6.2A 3Pin TO-263 T/R
Infineon
Trans IGBT Chip N-CH 1.2kV 6.2A 3Pin(2+Tab) TO-263 T/R
Infineon
Trans IGBT Chip N-CH 600V 6A 3Pin(2+Tab) TO-263
Infineon
Trans IGBT Chip N-CH 600V 6A 3Pin(2+Tab) TO-263
Infineon
IGBT, 2A, 1200V, N-CHANNEL
Siemens Semiconductor
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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