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SGD02N60BUMA1
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SGD02N60BUMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:TO-252-3
Description:Trans IGBT Chip N-CH 600V 6A 30000mW 3Pin(2+Tab) DPAK T/R
Documentation:SGD02N60BUMA1 Datasheet (12 Pages)SGD02N60BUMA1 User Reference Manual Guide (270 Pages)SGD02N60BUMA1 Application Note (48 Pages)
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SGD02N60BUMA1 Datasheet PDF (12 Pages)
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SGD02N60BUMA1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Power Dissipation30000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)30 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)30000 mW
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SGD02N60BUMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃ (TJ)
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SGD02N60BUMA1 Documents

SGD02N60BUMA1 Datasheet
Infineon
12 Pages / 0.34 MByte
SGD02N60BUMA1 User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
SGD02N60BUMA1 Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
SGD02N60BUMA1 Application Note
Infineon
48 Pages / 2 MByte

SGD02N60 Documents

SGD02N60 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 6A 30000mW 3Pin(2+Tab) DPAK T/R
SGD02N60 Datasheet PDF
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IGBT 600V 6A 30W TO252-3
SGD02N60 Datasheet PDF
Siemens Semiconductor
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
SGD02N60BUMA1 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 6A 30000mW 3Pin(2+Tab) DPAK T/R
SGD02N60XT Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 6A 3Pin(2+Tab) TO-252
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