| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 160000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 60 ns |
| Input Power (Max) | 160 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 40A 160W Through Hole TO-3P
ON Semiconductor
4 Pages / 0.04 MByte
ON Semiconductor
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