| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 160000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 160 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 40A 160W Through Hole TO-3P
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ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 160000mW 3Pin(3+Tab) TO-3PN Tube
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Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-3PN Rail
Fairchild
Trans IGBT Chip N-CH 600V 40A 160000mW 3Pin(3+Tab) TO-3PN Rail
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Fairchild"s UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
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