| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 40.0 A |
| Case/Package | TO-3-3 |
| Power Dissipation | 195 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 195 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 195000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●Fairchild"s UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
●The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
●Features
●• High speed switching
●• Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A
●• High input impedance
●Applications
●AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Fairchild
7 Pages / 0.58 MByte
Fairchild
7 Pages / 0.58 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR SGH80N60UFDTU IGBT Single Transistor, 80A, 2.6V, 195W, 600V, TO-3P, 3Pins
Fairchild
Trans IGBT Chip N-CH 600V 80A 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 195000mW 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 195000mW 3Pin(3+Tab) TO-3PN Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 3Pin (3+Tab) TO-3PN
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