SGP10N60RUF Datasheet PDF - Samsung

Trans IGBT Chip N-CH 600V 21A 3Pin (3+Tab) TO-220AB

Trans IGBT Chip N-CH 600V 16A 75000mW 3Pin(3+Tab) TO-220 Rail

Trans IGBT Chip N-CH 600V 16A 75000mW 3Pin(3+Tab) TO-220 Tube

Trans IGBT Chip N-CH 600V 20A 3Pin TO-220 Tube

Trans IGBT Chip N-CH 600V 20A 3Pin(3+Tab) TO-220

Fairchild"s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN

Short Circuit Rated IGBT

Trans IGBT Chip N-CH 600V 20A 3Pin(3+Tab) TO-220