| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 250 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Rise Time | 35.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 250 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Design |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.95 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SGW30N60 is a 600V Discrete IGBT without anti-parallel diode addressing soft switching/resonant and hard switching topologies. Eoff is 30% lower when compared to previous generation combined with low conduction losses. NPT technology offers very tight parameter distribution and temperature stable behaviour.
● Short circuit withstand time 10µs
● Designed for operation above 30kHz
● High ruggedness
● Parallel switching capability
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Trans IGBT Chip N-CH 600V 41A 250000mW 3Pin(3+Tab) TO-247 Tube
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Trans IGBT Chip N-CH 600V 41A 250000mW 3Pin(3+Tab) TO-247 Tube
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Trans IGBT Chip N-CH 600V 41A 250000mW 3Pin(3+Tab) TO-247 Tube
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IGBT Single Transistor, General Purpose, 41A, 3.15V, 250W, 600V, TO-247, 3Pins
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