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SGW30N60HS
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SGW30N60HS Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 41A 250000mW 3Pin(3+Tab) TO-247 Tube
Documentation:SGW30N60HS Datasheet (11 Pages)
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SGW30N60HS Datasheet PDF (11 Pages)

SGW30N60HS Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Rating250 W
Number of Positions3 Position
PolarityN-Channel
Power Dissipation250 W
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)250 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)250000 mW
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SGW30N60HS Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Design
PackagingTube
Size-Length15.9 mm
Size-Width5.3 mm
Size-Height20.95 mm
Operating Temperature-55℃ ~ 150℃
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SGW30N60HS Documents

SGW30N60HS Datasheet
Infineon
11 Pages / 0.29 MByte
SGW30N60HS Other Datasheet PDF
Infineon
13 Pages / 0.34 MByte

SGW30N60 Documents

SGW30N60 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 41A 250000mW 3Pin(3+Tab) TO-247 Tube
SGW30N60FKSA1 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 41A 250000mW 3Pin(3+Tab) TO-247 Tube
SGW30N60HS Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 41A 250000mW 3Pin(3+Tab) TO-247 Tube
SGW30N60HSFKSA1 Datasheet PDF
Infineon
IGBT Single Transistor, General Purpose, 41A, 3.15V, 250W, 600V, TO-247, 3Pins
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