| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SC-75 |
| Drain to Source Resistance (on) (Rds) | 1.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 250 mW |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 330 mA |
N-Channel 1.8 V (G-S) MOSFET FEATURES •Halogen-free According to IEC 61249-2-21 Definition •TrenchFET Power MOSFET: 1.8 V Rated • Gate-Source ESD Protected: 2000V • High-Side Switching • Low On-Resistance: 0.7 • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • Compliant to RoHS Directive 2002/95/EC
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