| TYPE | DESCRIPTION |
|---|
| Case/Package | SC-89 |
| Drain to Source Resistance (on) (Rds) | 4.00 Ω |
| Polarity | P-Channel |
| Power Dissipation | 250 mW |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 0.19A |
P-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free Option Available • Trench FET Power MOSFETs • High-Side Switching • Low On-Resistance: 4 Ω • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.) • Low Input Capacitance: 23 pF (typ.) • Miniature Package • Gate-Source ESD Protected: 2000 V APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,Memories, Transistors etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid State Relays
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