| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SC-75 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 8 Ω |
| Polarity | P-Channel |
| Power Dissipation | 250 mW |
| Threshold Voltage | 900 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 140 mA |
| Rise Time | 30 ns |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.25 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.68 mm |
| Size-Width | 0.86 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SI1031R-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
● 2000V Gate-source ESD protected
● High-side switching
● Low ON-resistance
● Low threshold
● 45ns Fast switching speed
● 1.5V Rated voltage
● Halogen-free
● Ease in driving switches
● Low offset voltage
● Low-voltage operation
● High-speed circuits
● Low battery voltage operation
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