| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 900 mW |
| Drain to Source Voltage (Vds) | -20.0 V |
| Continuous Drain Current (Ids) | -2.20 A |
| Input Capacitance (Ciss) | 375pF @6V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.7 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
The SI2301BDS-T1-E3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
● 100% Rg tested
● -55 to 150°C Operating temperature range
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