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SI2301BDS-T1-GE3
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SI2301BDS-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOT-23
Description:Trans MOSFET P-CH 20V 2.2A 3Pin SOT-23 T/R
Documentation:SI2301BDS-T1-GE3 Datasheet (9 Pages)
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SI2301BDS-T1-GE3 Datasheet PDF (9 Pages)
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SI2301BDS-T1-GE3 Specifications

TYPEDESCRIPTION
Number of Pins3 Pin
Case/PackageSOT-23
Drain to Source Resistance (on) (Rds)0.08 Ω
PolarityP-Channel
Power Dissipation700 mW
Drain to Source Voltage (Vds)-20.0 V
Continuous Drain Current (Ids)-2.20 A
Rise Time40 ns
Fall Time20 ns
Operating Temperature (Max)150 ℃
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SI2301BDS-T1-GE3 Size & Package

TYPEDESCRIPTION
Operating Temperature-55℃ ~ 150℃
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SI2301BDS-T1-GE3 Documents

SI2301BDS-T1-GE3 Datasheet
Vishay Semiconductor
9 Pages / 0.2 MByte
SI2301BDS-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
9 Pages / 0.2 MByte
SI2301BDS-T1-GE3 Notice File
Vishay Semiconductor
2 Pages / 0.09 MByte

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SI2301BDS-T1-E3 Datasheet PDF
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MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
SI2301BDS-T1-GE3 Datasheet PDF
VISHAY
SOT-23-3P-CH 20V 2.2A 100mΩ
SI2301BDS-T1-E3 Datasheet PDF
Vishay Semiconductor
MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
SI2301BDS-T1-GE3 Datasheet PDF
Vishay Semiconductor
Trans MOSFET P-CH 20V 2.2A 3Pin SOT-23 T/R
SI2301BDS-T1-GE3 Datasheet PDF
Vishay Siliconix
Trans MOSFET P-CH 20V 2.2A 3Pin TO-236 T/R
SI2301BDS-T1-E3 Datasheet PDF
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SI2301BDS-T1-GE3 Datasheet PDF
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