TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23 |
Power Rating | 1.6 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.142 Ω |
Polarity | P-Channel |
Power Dissipation | 1.6 W |
Drain to Source Voltage (Vds) | -20.0 V |
Continuous Drain Current (Ids) | -3.10 A |
Rise Time | 35 ns |
Input Capacitance (Ciss) | 405pF @10V(Vds) |
Fall Time | 10 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 860 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.02 mm |
Operating Temperature | -55℃ ~ 150℃ |
The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
● Halogen-free
● -55 to 150°C Operating temperature range
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