TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.045 Ω |
Polarity | N-Channel |
Power Dissipation | 710 mW |
Threshold Voltage | 850 mV |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 2.90 A |
Rise Time | 7 ns |
Input Power (Max) | 710 mW |
Fall Time | 7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 860 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.60 mm |
Size-Height | 1.45 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 3000 |
The SI2302CDS-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.
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