| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.045 Ω |
| Polarity | N-Channel |
| Power Dissipation | 710 mW |
| Threshold Voltage | 850 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 2.9A |
| Rise Time | 7 ns |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 710mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 3000 |
Increase the current or voltage in your circuit with this SI2302DDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 710 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology.
VISHAY
8 Pages / 0.19 MByte
VISHAY
8 Pages / 0.19 MByte
VISHAY
3 Pages / 0.08 MByte
VISHAY
SOT-23-3 N-CH 20V 2.9A 57mΩ
Vishay Semiconductor
MOSFET 20V 2.9A 0.86W 57mohm @ 4.5V
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