| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.028 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.7 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 8 V |
| Continuous Drain Current (Ids) | 4.4A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 960pF @4V(Vds) |
| Input Power (Max) | 1.7 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 3000 |
The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.
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