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SI2305CDS-T1-GE3
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SI2305CDS-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOT-23
Description:Trans MOSFET P-CH 8V 4.4A 3Pin SOT-23 T/R
Documentation:SI2305CDS-T1-GE3 Datasheet (10 Pages)Package Outline Dimension on7 Page8 Page
Part Numbering System on1 Page
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SI2305CDS-T1-GE3 Datasheet PDF (10 Pages)
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SI2305CDS-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageSOT-23
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.028 Ω
PolarityP-Channel
Power Dissipation1.7 W
Rise Time20 ns
Input Capacitance (Ciss)960pF @4V(Vds)
Fall Time10 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)0.96 W
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SI2305CDS-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length3.04 mm
Size-Width1.4 mm
Size-Height1.02 mm
Operating Temperature-55℃ ~ 150℃
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SI2305CDS-T1-GE3 Documents

SI2305CDS-T1-GE3 Datasheet
Vishay Semiconductor
10 Pages / 0.21 MByte
SI2305CDS-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
10 Pages / 0.22 MByte
SI2305CDS-T1-GE3 Notice File
Vishay Semiconductor
2 Pages / 0.09 MByte

SI2305CDST1 Documents

SI2305CDS-T1-GE3 Datasheet PDF
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SOT-23-3P-CH 8V 4.4A 28mΩ
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VISHAY SI2305CDS-T1-GE3 MOSFET Transistor, P Channel, -5.8A, -8V, 0.028Ω, -4.5V, -1V
SI2305CDS-T1-GE3 Datasheet PDF
Vishay Semiconductor
Trans MOSFET P-CH 8V 4.4A 3Pin SOT-23 T/R
SI2305CDS-T1-GE3 Datasheet PDF
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P-CHANNEL 8 V (D-S) MOSFET
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