SI2308CDS-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:	VISHAY
Case Package:	SOT-23
Description:	N-Channel 60 V (D-S) MOSFET
Documentation:	SI2308CDS-T1-GE3 Datasheet (9 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

SI2308CDS-T1-GE3 Specifications

TYPE	DESCRIPTION
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.12 Ω
Power Dissipation	0.9 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	60 V
Input Capacitance (Ciss)	105pF @30V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	900 mW