TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOT-23 |
Drain to Source Resistance (on) (Rds) | 0.275 Ω |
Polarity | P-Channel |
Power Dissipation | 1.25 W |
Drain to Source Voltage (Vds) | -60.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | -1.25 A |
Rise Time | 11.5 ns |
Fall Time | 7.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ |
●Features:
● Halogen-Free According to IEC 61249-2-21 Definition
● TrenchFET® Power MOSFET: 1.8 V Rated
● Ultra Low On-Resistance for Increased Battery Life
● New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
● Compliant to RoHS Directive 2002/95/EC
●Applications:
● Load/Power Switching in Portable Devices
Vishay Semiconductor
5 Pages / 0.07 MByte
Vishay Semiconductor
5 Pages / 0.07 MByte
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