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SI2318CDS-T1-GE3
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SI2318CDS-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:TO-236
Description:Trans MOSFET N-CH 40V 4.3A 3Pin SOT-23 T/R
Documentation:SI2318CDS-T1-GE3 Datasheet (11 Pages)Package Outline Dimension on7 Page8 Page
Part Numbering System on1 Page
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SI2318CDS-T1-GE3 Datasheet PDF (11 Pages)
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SI2318CDS-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-236
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.036 Ω
PolarityN-Channel
Power Dissipation750 mW
Threshold Voltage3 V
Drain to Source Voltage (Vds)40 V
Input Capacitance (Ciss)340pF @20V(Vds)
Fall Time8 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2.1 W
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SI2318CDS-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length3.04 mm
Size-Width1.4 mm
Size-Height1.02 mm
Operating Temperature-55℃ ~ 150℃
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SI2318CDS-T1-GE3 Documents

SI2318CDS-T1-GE3 Datasheet
Vishay Semiconductor
11 Pages / 0.23 MByte
SI2318CDS-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
10 Pages / 0.23 MByte
SI2318CDS-T1-GE3 Notice File
Vishay Semiconductor
2 Pages / 0.09 MByte

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