| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOP |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.05 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3.2 W |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | -4.70 A, 3.90 A |
| Input Capacitance (Ciss) | 610pF @10V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Height | 1 mm |
The SI3443CDV-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for HDD, asynchronous rectification and load switch applications.
● PWM optimized
● 100% Rg tested
● Halogen-free
● -55 to 150°C Operating temperature range
Vishay Semiconductor
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Vishay Semiconductor
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