| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.054 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.6 W |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | -4.00 A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 640pF @10V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The SI3443DV is a 2.5V specified P-channel MOSFET produced using Fairchild"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small foot-print for applications where the larger packages are impractical.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● 7.2nC Typical low gate charge
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FAIRCHILD SEMICONDUCTOR SI3443DV MOSFET Transistor, P Channel, -4A, -20V, 0.054Ω, -4.5V, -700mV
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