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SI4420BDY-T1-GE3
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SI4420BDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:VISHAY
Category:MOSFETs
Case Package:SOIC-8
Description:SOIC-8 N-CH 30V 9.5A 8.5mΩ
Documentation:SI4420BDY-T1-GE3 Datasheet (6 Pages)Part Numbering System on1 Page
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SI4420BDY-T1-GE3 Datasheet PDF (6 Pages)
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SI4420BDY-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSOIC-8
Drain to Source Resistance (on) (Rds)8.5 mΩ
PolarityN-CH
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)9.5A
Rise Time11 ns
Input Power (Max)1.4 W
Fall Time12 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2500 mW
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SI4420BDY-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity2500
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SI4420BDY-T1-GE3 Documents

SI4420BDY-T1-GE3 Datasheet
VISHAY
6 Pages / 0.11 MByte
SI4420BDY-T1-GE3 Other Datasheet PDF
VISHAY
8 Pages / 0.17 MByte

SI4420BDYT1 Documents

SI4420BDY-T1-E3 Datasheet PDF
VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
SI4420BDY-T1-E3 Datasheet PDF
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
SI4420BDY-T1-E3 Datasheet PDF
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
SI4420BDY-T1-GE3 Datasheet PDF
VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
SI4420BDY-T1-GE3 Datasheet PDF
Vishay Siliconix
MOSFET N-CH 30V 9.5A 8-SOIC
SI4420BDY-T1-GE3 Datasheet PDF
Vishay Semiconductor
Trans MOSFET N-CH 30V 9.5A 8Pin SOIC N T/R
SI4420BDY-T1-GE3 Datasheet PDF
Vishay Intertechnology
SI4420BDY-T1-E3 Datasheet PDF
Vishay Intertechnology
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