| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.007 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.5 W |
| Drain to Source Voltage (Vds) | -20.0 V |
| Continuous Drain Current (Ids) | -14.0 A |
| Rise Time | 90 ns |
| Fall Time | 170 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 2500 |
The SI4421DY-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
● Halogen-free
● -55 to 150°C Operating temperature range
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