TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.023 Ω |
Polarity | P-Channel |
Power Dissipation | 2.5 W |
Drain to Source Voltage (Vds) | -30.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 5.80 A, -7.50 A |
Rise Time | 10 ns |
Fall Time | 47 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.5 W |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.55 mm |
Operating Temperature | -55℃ ~ 150℃ |
The SI4431BDY-T1-E3 is a -30V P-channel TrenchFET® Power MOSFET with advance high density process. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
● Halogen-free according to IEC 61249-2-21 definition
Vishay Semiconductor
6 Pages / 0.07 MByte
Vishay Semiconductor
8 Pages / 0.15 MByte
Vishay Semiconductor
Trans MOSFET P-CH 30V 5.7A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET P-CH 30V 5.7A 8-SOIC
Vishay Semiconductor
MOSFET 30V 7.5A 2.5W 30mohm @ 10V
Vishay Siliconix
Trans MOSFET P-CH 30V 5.7A 8Pin SOIC N T/R
Vishay Siliconix
P-CHANNEL 30V (D-S) MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.