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SI4431BDY-T1-GE3
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SI4431BDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:VISHAY
Category:MOSFETs
Case Package:SOIC-8
Description:SOIC-8P-CH 30V 5.7A 30mΩ
Documentation:SI4431BDY-T1-GE3 Datasheet (6 Pages)Part Numbering System on1 Page
SI4431BDY-T1-GE3 Application Note (4 Pages)
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SI4431BDY-T1-GE3 Datasheet PDF (6 Pages)
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SI4431BDY-T1-GE3 Specifications

TYPEDESCRIPTION
Number of Pins8 Pin
Case/PackageSOIC-8
Drain to Source Resistance (on) (Rds)23 mΩ
PolarityP-CH
Power Dissipation1.5 W
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)5.7A
Rise Time10 ns
Fall Time47 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2500 mW
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SI4431BDY-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃
Minimum Packing Quantity2500
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SI4431BDY-T1-GE3 Documents

SI4431BDY-T1-GE3 Datasheet
VISHAY
6 Pages / 0.09 MByte
SI4431BDY-T1-GE3 Other Datasheet PDF
VISHAY
9 Pages / 0.19 MByte
SI4431BDY-T1-GE3 Application Note
VISHAY
4 Pages / 0.05 MByte

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