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SI4431BDY-T1-GE3
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SI4431BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC
Description:MOSFET 30V 7.5A 2.5W 30mohm @ 10V
Documentation:SI4431BDY-T1-GE3 Datasheet (9 Pages)Package Outline Dimension on6 Page7 Page
Part Numbering System on1 Page
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SI4431BDY-T1-GE3 Datasheet PDF (9 Pages)
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SI4431BDY-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSOIC
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.023 Ω
PolarityP-Channel
Power Dissipation1.5 W
Drain to Source Voltage (Vds)-30.0 V
Continuous Drain Current (Ids)-5.70 A
Rise Time10 ns
Fall Time47 ns
Operating Temperature (Max)150 ℃
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SI4431BDY-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃
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SI4431BDY-T1-GE3 Documents

SI4431BDY-T1-GE3 Datasheet
Vishay Semiconductor
9 Pages / 0.22 MByte
SI4431BDY-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
9 Pages / 0.22 MByte

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