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SI4431CDY-T1-GE3
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SI4431CDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC-8
Description:Trans MOSFET P-CH 30V 7A 8Pin SOIC N T/R
Documentation:SI4431CDY-T1-GE3 Datasheet (10 Pages)Package Outline Dimension on7 Page8 Page9 Page
Part Numbering System on1 Page
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SI4431CDY-T1-GE3 Datasheet PDF (10 Pages)
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SI4431CDY-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSOIC-8
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.026 Ω
PolarityP-Channel
Power Dissipation4.2 W
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)-9.00 A
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)4.2 W
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SI4431CDY-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length5 mm
Size-Width4 mm
Size-Height1.55 mm
Operating Temperature-55℃ ~ 150℃
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SI4431CDY-T1-GE3 Documents

SI4431CDY-T1-GE3 Datasheet
Vishay Semiconductor
10 Pages / 0.26 MByte
SI4431CDY-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
10 Pages / 0.24 MByte

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