| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO |
| Drain to Source Resistance (on) (Rds) | 32.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.50 W |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
General Description
●This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
●Features
●• –6.3 A, –30 V. RDS(ON)= 0.032 Ω @ VGS= -10 V
● RDS(ON)= 0.05 Ω @ VGS= -4.5 V
●•Low gate charge
●•Fast switching speed
●• High performance trench technology for extremely low RDS(ON)
●• High power and current handling capability
●Applications
●•DC/DC converter
●•Load switch
●•Motor Drive
Fairchild
5 Pages / 0.08 MByte
Fairchild
5 Pages / 0.06 MByte
Fairchild
P-Channel Logic Level PowerTrench MOSFET
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