| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0085 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.5 W |
| Threshold Voltage | 1.4 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 13.7 A |
| Rise Time | 60 ns |
| Input Power (Max) | 1.5 W |
| Fall Time | 75 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2500 |
The SI4463BDY-T1-E3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
● -55 to 150°C Operating temperature range
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