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SI4463BDY-T1-GE3
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SI4463BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC-8
Description:MOSFET 20V 13.7A 3W 11mohm @ 10V
Documentation:SI4463BDY-T1-GE3 Datasheet (9 Pages)Package Outline Dimension on6 Page7 Page
Part Numbering System on1 Page
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SI4463BDY-T1-GE3 Datasheet PDF (9 Pages)
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SI4463BDY-T1-GE3 Specifications

TYPEDESCRIPTION
Number of Pins8 Pin
Case/PackageSOIC-8
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.02 Ω
PolarityP-Channel
Power Dissipation1.5 W
Drain to Source Voltage (Vds)-20.0 V
Continuous Drain Current (Ids)13.7 A
Operating Temperature (Max)150 ℃
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SI4463BDY-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
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SI4463BDY-T1-GE3 Documents

SI4463BDY-T1-GE3 Datasheet
Vishay Semiconductor
9 Pages / 0.22 MByte
SI4463BDY-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
8 Pages / 0.15 MByte

SI4463BDYT1 Documents

SI4463BDY-T1-E3 Datasheet PDF
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SI4463BDY-T1-E3 Datasheet PDF
Vishay Semiconductor
MOSFET; P-Channel; -20V; + 12V; 0.009Ω @ -4.5V, -13A; 1.5W @ degC
SI4463BDY-T1-GE3 Datasheet PDF
Vishay Siliconix
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SI4463BDY-T1-GE3 Datasheet PDF
Vishay Semiconductor
MOSFET 20V 13.7A 3W 11mohm @ 10V
SI4463BDY-T1-GE3 Datasheet PDF
VISHAY
SOIC-8P-CH 20V 9.8A 11mΩ
SI4463BDY-T1-E3 Datasheet PDF
Vishay Intertechnology
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